Ultra thin gate oxide reliability enhanced by carbon contamination free process

In this paper, we have demonstrated that carbon contamination caused by a wafer exposure to clean room air induces the degradation of a gate oxide reliability, and we have improved a gate oxide reliability by using a closed system, where the oxidation is followed by an in-situ phosphorus doped polycrystalline Si (poly-Si) gate formation in the same furnace. Furthermore, in opened system, we have demonstrated the removal of the carbon contamination by using only 0, gas ambient and 0, gas ambient combined with IR lamp irradiation