The control and modification of semiconductor interfaces using thin multi-quantum barrier/well (MQB/W) reflectors

In this article, multi-quantum barrier/well (MQB/W) reflectors are used to modify interfacial barriers in Schottky contacts and heterojunctions. The problem was investigated both theoretically and experimentally for Au-GaAs, Au-Al- GaAs and InAs-GaAs interfaces using a GaAs/AlGaAs MQB/W superlattice. We report, for the first time, an enhancement in the interfacial barriers of 0.29, 0.07 and 0.22 eV respectively due to the MQB/W reflectors. The agreement between theory and experiment was excellent whereby it was possible to model the experimental Z-V characteristics to extract the modification due to the presence of the superlattice. The advantages of this technique and its limitations are addressed within the text and highlight the power of this technique for band engineering.