Title of article
The properties of Schottky junctions on Nb-doped SrTiO, (001)
Author/Authors
Takashi Shimizu *، نويسنده , , Naoki Gotoh ‘، نويسنده , , Naoya Shinozaki 2، نويسنده , , Hideyo Okushi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
6
From page
400
To page
405
Abstract
A systematic investigation of surface treatments for metal/Nb-doped SrTiO, (NSTO) (001) junctions has been described.
Well-controlled metal/NSTO (001) interfaces have been obtained using in-situ deposition of metal electrodes on a NSTO
surface soon after the surface treatment using high-purity ozone. As a result, the current-voltage (Z-V) characteristics of the
Au/NSTO and Cu/NSTO Schottky barrier (SB) junctions show high rectification ratios over nine orders of magnitude. The
SB heights evaluated from the Z-V characteristics are 1.42 eV for Au/NSTO and 1.02 eV for Cu/NSTO.
Keywords
Nb-doped SrTiO , Schottky barrier height , ozone treatment , Ideality factor , Schottky-Mott rule
Journal title
Applied Surface Science
Serial Year
1997
Journal title
Applied Surface Science
Record number
991820
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