Epitaxial growth and characterization of GaS,Se, _-x layered compound semiconductor by molecular beam epitaxy

C-axis inclined GaS,Se, __* films were successfully grown on misoriented (001)GaAs substrate. The growth temperature ranged from 500-54O”C, which is similar with the case of GaSe/GaAs system. In the Raman spectra, the shift of one-mode and two-mode phonon spectra were observed. Strong photoluminescence spectra of GaS,Se, _-x for various compositions of the film were also observed and the energy shift of the peak is consistent with the shift of the bandgap energy