Title of article
Thin film CaF, stabilizing effect on single-crystal diamond surface
Author/Authors
Young Yun *، نويسنده , , Tetsuro Maki I، نويسنده , , Takeshi Kobayashi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
570
To page
573
Abstract
A metal/insulator/semiconducting (MIS) diamond structure employing SrTiO,/CaF, composite film as a gate insulator
was fabricated and its electrical properties were investigated by C-V measurement. In the C-V curve, the
Al/SrTiO,/CaF,/diamond MIS structure exhibited high capacitance as well as reduction of the surface state on the
diamond surface. In addition, the temperature gradient method during the deposition of SrTiO, film was very effective to
obtain the crack-free composite film of SrTiO,/CaF, composite structure.
Keywords
FET , SrTiO , CAF , Temperature gradient method , Surface stabilization , Accumulationcondition , MIS , Diamond thin film , Fermi level
Journal title
Applied Surface Science
Serial Year
1997
Journal title
Applied Surface Science
Record number
991849
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