Thin film CaF, stabilizing effect on single-crystal diamond surface

A metal/insulator/semiconducting (MIS) diamond structure employing SrTiO,/CaF, composite film as a gate insulator was fabricated and its electrical properties were investigated by C-V measurement. In the C-V curve, the Al/SrTiO,/CaF,/diamond MIS structure exhibited high capacitance as well as reduction of the surface state on the diamond surface. In addition, the temperature gradient method during the deposition of SrTiO, film was very effective to obtain the crack-free composite film of SrTiO,/CaF, composite structure.