ESR charactetization of defects produced in diamond surface by B ion implantation

The defects produced by B ion implantation into CVD diamond films have been investigated by the electron spin resonance (ESR) method. The ESR analysis revealed the P,-center (g = 2.003, AH, = lo-16 Oe), which originates from carbon dangling bonds in the non-diamond phase carbon region. When the dose of B ion increased from 1 X 1013 to 1 x 1OL6 ions/cm*, the spin density of the P,-center in the implanted region increased from 1.5 X 10” to 3.2 X 10” spins/cm3 and AH, also increased from 10 to 16 Oe, while A Hpp decreased from 20 to 2.6 Oe in the case of N ion implantation. The spin density of the P,-center and the AH, strongly depends on B ion doses.