Characterization of neutral and charged defects in a-Si,N,:H/a-Si:H multilayers

The spin density for the Si-dangling-bond component in the LESR signal is far larger than that in the ESR signal in the dark in a-Si,N,:H/a-Si:H multilayers. The fact suggests the presence of a large density of charged Si-dangling-bonds near the interface. The neutral Si-dangling-bonds, the charged Si-dangling-bonds and the spin centers for the narrow component in the LESR signal are found to be largely concentrated near the interface in comparison with the spin centers for the broad component in the LESR signal. The density of neutral Si-dangling-bonds in the 7.5 nm thick a-Si:H layer is found to decrease with annealing at 250°C and to increase with annealing above 350°C.