Compositional abruptness of wet-oxidized AlAs/GaAs interface

Data are presented on the interface abruptness of a selectively wet-oxidized AlAs/GaAs multilayer using transmission electron microscopy (TEM) and energy-dispersive X-ray microanalysis (micro-EDX). It has been found by TEM study that the oxidized region was amorphous and well confined in the original AlAs layer and that there were transition regions on the oxide side of the interface. The compositional abruptness of the interfaces verified by micro-EDX revealed that structural abruptness (amorphous/crystal) is determined by the oxide profile and the transition regions found by TEM were thought to be a region where the components of the semiconductor materials in both sides of the interface intermixed.