Bistability of electroluminescence in InA1As/InP type II MQW diodes

Bistable behavior of electroluminescence (EL) was studied for the InA1As/InP type II MQW diodes grown by gas source molecular beam epitaxy. The bistability of the current-light output (l-L) characteristic is clearly observed at 80 K, and it exactly corresponds to the bistability of the current-voltage (l-V) characteristic. The bistability shows a remarkable temperature dependence, and disappears above 200 K. It was found that subpeaks suddenly appear at the higher energy side of the main peak (1.28 eV) with increasing temperature. These subpeaks are attributed to the transition between the subband levels with different quantum numbers