Analysis of GaAs/SiN interface states and hot carrier annealing effects in GaAs MESFET

We have analyzed in detail the disappearance phenomenon of the plasma induced interface states (GaAs/SiN) on GaAs MESFET by means of drain current transient, three-terminal gate current, optical beam induced current (OBIC) and light emission. The energy level of trapped electrons in the interface states distributes widely in the band-gap below the conduction band. The interface states decrease by high temperature operation keeping its energy level constant. It requires hot-carrier effects to decrease the interface states.