Title of article :
A molecular beam study of the adsorption of tertiarybutylarsine
(TBAs) on As-rich GaAs (001) surfaces
Author/Authors :
Jie Cui * ، نويسنده , , Masashi Ozeki، نويسنده , , Masafumi Ohashi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1997
Abstract :
The scattering properties of tertiarybutylarsine (TBAs) on c(4 X 4), 2 X 4 GaAs(001) surfaces were studied by
supersonic-molecular beam scattering. Polar angle measurement showed that the scattering signal was contributed from
thermal desorption of trapped molecules combined with the direct-inelastic scattering. The sticking coefficient measurement
revealed that the scattering behavior was very different for c(4 X 4) and 2 X 4 initial surface reconstructions. It is concluded
that TBAs molecules can non-dissociatively chemisorb on c(4 X 4) through precursor-mediated mechanism, and physisorb
on 2 X 4 surface. The desorption of TBAs molecule from the chemisorbed well was observed at higher temperatures above
400 K. The activation energies of the desorption (10.9 and 7.7 kcal/mol) are small reflecting that the TBAs molecular
chemisorption wells are shallow.
Keywords :
Semiconductor surface , Supersonic molecular beam , Precursor-mediated adsorption , C&As , TBAs , Direct-inelastic scattering
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science