Title of article
Atom configuration study of &doped Er in InP by fluorescence EXAFS
Author/Authors
H. Ofuchi، نويسنده , , Kenji J. Tsuchiya، نويسنده , , N. Matsubara، نويسنده , , M. Tabuchi، نويسنده , , Y. Fujiwara، نويسنده , , Y. Takeda، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
781
To page
784
Abstract
We have investigated OMVPE-grown InP &doped with Er by EXAFS. The EXAFS measurement revealed that Er atoms
which were &doped in InP by exposing to Er source for 12 min at 530°C (15 min Er-exposed sample) formed
NaCl-structure ErP whose Er-P bond length was 2.80 f 0.03 A. The 10 min Er-exposed sample at 580°C showed a
spectrum similar to cubic bixbyite structure Er,O, which was not observed in uniformly Er-doped InP samples. For the 40
min Er-exposed sample at 53O”C, Er atoms formed both ErP and Er,O,.
Keywords
Erbium , &doping , OMVPE , EXAFS , InP
Journal title
Applied Surface Science
Serial Year
1997
Journal title
Applied Surface Science
Record number
991888
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