Title of article :
Occupation site and distribution of S-doped Er in InP measured by X-ray CTR scattering
Author/Authors :
K. Fujita *، نويسنده , , Kenji J. Tsuchiya، نويسنده , , S. Ichiki، نويسنده , , H. Hamamatsu، نويسنده , , N. Matsumoto، نويسنده , , M. Tabuchi، نويسنده , , Y. Fujiwara، نويسنده , , Y. Takeda، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1997
Pages :
5
From page :
785
To page :
789
Abstract :
Atomic level hetero-structure analysis of Er S-doped InP grown by OMVPE was successfully made by the X-ray crystal truncation rod (CTR) scattering measurement using synchrotron radiation. It was shown that Er atoms in the S-doped InP formed rocksalt structure ErP. Distributions of the Er atoms around the S-doped layers were also revealed clearly on the atomic scale. The total amounts of incorporated Er increased exponentially as the Er supply time increased
Keywords :
OMVPE , synchrotron radiation , InP , CTR , Er doping
Journal title :
Applied Surface Science
Serial Year :
1997
Journal title :
Applied Surface Science
Record number :
991889
Link To Document :
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