Photoemission T. Jikimoto a, * , T. Tsukamoto a, study of 6H-SiC(OOO1)S i face

We have studied heat-treated 6H-SiC(OOOl)Si face with photoemission spectroscopy using synchrotron radiation (SR-PES) and low energy electron diffraction (LEED). LEED patterns of Sic 1 X 1, fi x 6, 66 x 66 and graphite 1 X 1 were observed at annealing temperatures of 900, 1000, 1100 and 125O”C, respectively. By annealing at 2 1100°C the selvedge of - 1 nm from the surface of 6H-SiC(OOOl)Si face becomes C-rich. fi X 6 su rf ace structure might be caused by change of the Si state mainly in the depth of I 0.5 nm of 6H-SiC(OOOl)Si face. At - 1100 and - 125O”C, graphite-layers are formed on the selvedge of 1 nm of the 6H-SiC(0001) surface although the number of graphite- and/or carbon layer at - 1100°C could be less than that at - 1250°C.