Compensation for acceptor centers in AlxGa1−xAs layers by Er+-implantation and thermal treatment

Van der Pauw Hall and deep level transient spectroscopy (DLTS) measurements were performed to investigate the electrical properties of the Er-doped AlxGa1−xAs layers grown on GaAs substrates by metalorganic chemical vapor deposition. The results of the Hall effect measurements showed that the carrier concentration of the Er+-implanted n-type AlxGa1−xAs layer decreases as the magnitude of the Er dose increases. The results of the DLTS spectra for the AlxGa1−xAs doped with Er and thermally treated showed three electron traps at Ec−0.17 eV, Ec−0.34 eV, and Ec−0.5 eV, which might be related to antisite defects acting as acceptors. This result indicates that the Er+-implantation and annealing process of the n-type AlxGa1−x layer compensate for large concentrations of acceptors such as Er-related centers.