Investigation on the surface reactivity of luminescent porous silicon

The photoluminescent quenching by chemical adsorption was studied on HNO3 chemically oxidized and as-prepared porous silicon. The improvement of photoluminescent stability, coexistent with the strong sensitivity of photoluminescence to organic adsorbates was revealed in the HNO3 chemically oxidized porous silicon. The dependence of the polarity of organic adsorbates on the photoluminescent quenching of both porous silicon was examined and compared.