Thin multilayer CdSrZnS films grown by SILAR technique

Multilayer ZnSrCdS thin films were grown on glass, ITO-covered glass and 100.GaAs substrates by successive ionic layer adsorption and reaction SILAR.technique at room temperature and ambient pressure. The layers in multilayer thin film structures were nominally 1–6 nm thick and the amount of layers varied so that the total thickness of 100–120 nm was achieved. The films were polycrystalline according to X-ray diffraction analysis and scanning electron microscopy. The interfaces between the separate cadmium sulfide CdS.and zinc sulfide ZnS.layers were not sharp, but contained thin CdxZn1yxS solid solution layers. Annealing enhanced the mixing of the different layers and after 50 h at 3008C no separate CdS and ZnS X-ray reflections could be detected. About 20 nm thick layers could be detected as separate fields by scanning electron microscopy. q1997 Elsevier Science B.V.