Structural changes in thin Sit 2 on Si after RIE-like nitrogen plasma action

Reactive ion etching (RIE) damage effects on thin (13 nm) thermal Sit 2 on Si have been studied using X-ray photoelectron spectroscopy. It is found that 5 min exposure of the oxide to N 2 plasma operating in RIE-mode causes structural modifications which manifest only as a deterioration of the oxide quality but without actual nitridation of the oxide. The presence of a small (< 10%) constant amount of Sit species through the oxide and a broadening of Si-SiO 2 interface transition region are detected as consequences from the RIE process. © 1997 Elsevier Science B.V.