Epitaxial erbium silicide films on(100)silicon: growth, structure and electrical properties

Erbium silicide layers were grown epitaxially on (100) Si. Electron microscopy results showed that ErSi2_ x layers grow on (100) Si with hexagonal and tetragonal crystalline structures, depending on the method of deposition, the substrate temperature and their stoichiometry. Electrical resistivity measurements show that the two crystalline phases of ErSi2_ x are metallic and have slightly different electronic and magnetic properties. © 1997 Elsevier Science B.V.