Abstract :
The structure of electrochemically deposited Cu on p-GaAs(001) was investigated by means of atomic force microscopy (AFM) and X-ray absorption fine structure (XAFS) measurement. AFM measurement showed that the Cu deposition proceeded strongly depending on the applied potential and the concentration of Cu2+ ion in solution. Atomic arrangements corresponding to Cu(111)-(1 × 1) and GaAs(001)-(1 × 1) were observed on top of the Cu deposits and at the regions between the Cu deposits, respectively. XAFS data demonstrated that the Cu microclusters were formed on GaAs as initial deposition.
