Structural transformations of the Si(111)2 × 2-In surface induced by STM tip and thermal annealing

We have investigated In deposition on to View the MathML source surface by using low-energy electron diffraction (LEED) and scanning tunnelling microscopy (STM). A 2 × 2 structure was formed at 50–100°C. Indium deposition at around 200°C on the View the MathML source surface or thermal annealing of the 2 × 2 surface resulted in the 4 × 1 structure formation but not through a View the MathML source phase, as takes place at higher temperatures. The difference between low and high temperature surface phase formation is discussed. We have found that the 2 × 2 structure converts into the View the MathML source one during STM observation. This process was explained by STM-induced In atoms diffusion and/or desorption. Possible atomic arrangement of the 2 × 2-In reconstruction was proposed.