Structural properties of poly-Si deposited by rf glow discharge using 100% SiH4

Optical properties of polycrystalline silicon (poly-Si) films grown by rf glow discharge method are presented. Poly-Si films were grown by rf glow discharge method using SiH4 with and without dilution by hydrogen in the temperature range of 300–400°C. The films were characterized using IR, Raman, optical reflectance and transmittance spectroscopy and spectroellipsometry. It was found that the films grown have a well defined crystalline nature. The optical properties and degree of crystallinity of poly-Si films grown using 100% SiH4 are only slightly different from the properties of films grown using highly diluted SiH4.