Electrochemical formation and characterization of Schottky in-plane and wrap gate structures for realization of GaAs- and InP-based quantum wires and dots

In order to realize high temperature operating quantum devices, this paper attempts to form nm-size Schottky in-plane gate (IPG) and wrap gate (WPG) structures on GaAs- and InP-based nanostructures by an in-situ electrochemical process. Pulsed electrodeposition of Pt was found to be optimal, realizing nearly pinning-free high Schottky barrier heights as well as fine and highly uniform nm-size grains with minimal stress. Using the optimized process, quantum wire transistors and single electron transistors were successfully realized on GaAs etched 2DEG bars and on MBE grown InGaAs ridge quantum wires.