Title of article :
Transmission coefficients of GaAs/ErAs resonant tunneling diodes in strong magnetic fields
Author/Authors :
A.G. Petukhov، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Abstract :
Zener-like resonant tunneling through ErAs quantum wells in a magnetic field has been studied quantitatively. The calculated transmission coefficient displays strong dependence on the magnitude and orientation of the magnetic field in agreement with the experiment. The magnetic field dependence of the transmission coefficient is explained in terms of strong interaction of confined hole states with 4f spins, spin-orbit interaction and angular momentum selection rules.
Keywords :
Metal-semiconductor interfaces , Resonant tunneling , Spin effects , Quantum wells , Magnetic fields
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science