Title of article
Differences between silicon oxycarbide regions at SiCsingle bondSiO2 prepared by plasma-assisted oxidation and thermal oxidations
Author/Authors
G. Lucovsky، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
5
From page
435
To page
439
Abstract
The initial stages of SiCsingle bondSiO2 interface formation by low temperature (300°C) remote plasma assisted oxidation (RPAO) have been studied by on-line Auger electron spectroscopy (AES) for flat and vicinal 6H SiC(0001) wafers with Si(0001) and C faces (0001), focusing on (i) interfacial bonding and (ii) oxidation rates for thickness up to about 2 nm.
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992242
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