Title of article
First principles calculations of the band offset of the ZnSe/BeTe heterojunctions
Author/Authors
P. Rodr?guez-Hern?ndez، نويسنده , , M. Gonz?lez-D?az، نويسنده , , A. Mun?oz، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
4
From page
445
To page
448
Abstract
We use an ab initio pseudopotential total energy method, based on the density functional theory, to study the valence band offset of ZnSe/BeTe heterojunctions. We analyze the non-polar (110) and the polar (001) interfaces. We investigate the effect of chemical composition and the geometry of the interface region on the band offset. We show the dependence of the lineup with the interface characteristics.
Keywords
Heterojunction , Band offset , Electronic structure , First principles
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992244
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