Abstract :
We describe the use of n- and p-type delta-doping layers in n-In0.53Ga0.47As for Schottky barrier enhancement. The delta-doping layers are introduced by MOCVD using silicon and zinc dopants respectively. From current-voltage characteristics of Au/In0.53Ga0.47As diodes measured at room temperature, we find substantial effective Schottky barrier height enhancement, with a best value of 0.69 eV and corresponding ideality factor of 1.06. Numerical modelling of Poissonʹs equation for these structures predicts effective barrier heights in good agreement with those measured.
