Interface structure analysis of Si/(H)/Ag system

A comparison of Schottky barrier heights was carried out between samples of an H-terminated Sisingle bondAg and samples having thermal desorption of H from the Sisingle bondAg. The barrier height of the latter samples increased more than that of the former except in the case where the Ag ion was deposited at an acceleration voltage of 1500 V. The experimental analysis suggests that the Ag ion accelerated at a high voltage bonded between the surface atom and the back bond of Si, suffered little degradation by the presence of H, and made a good Sisingle bondAg interface.