Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP

We have found that the electrical properties of carriers across the metal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area resulting in high values of the specific contact resistance to p-InP. For n−-InP, thermionic emission across nanosized inhomogeneities dominates the carrier flow when Tann440°C.