Adsorption and diffusion of Ga, In and As adatoms on (001) and (111) GaAs surfaces: a computer simulation study

We have performed molecular dynamics simulations of the adsorption and diffusion of Ga, In and As adatoms on the (2 × 1) and (2 × 4) reconstructions of the GaAs(001) surfaces as well as on the unreconstructed (111)A and (111)B surfaces. For both (111) surfaces, the diffusion was found to be isotropic, whereas for the (001) surfaces the diffusion was primarily along the dimer rows. The As atoms were found to be the most mobile, on all the surfaces considered. The effects of strain on the activation energies was also investigated.