Title of article :
GaAs/AlAs lateral superlattices on vicinal surfaces: from growth issues to new electronic properties
Author/Authors :
F. Laruelle، نويسنده , , F. Lelarge، نويسنده , , A. Cavanna، نويسنده , ,
T. Mélin، نويسنده , , F. Petit-Coviaux، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Abstract :
The AFM topography of GaAs vicinal surfaces shows that the step-step interaction is dominated by an important dipolar term which compensates the low kink energy to give straight ledges at 600°C. The Ga/Al ordering in GaAs/AlAs lateral superlattices is shown to be limited by the step array disorder as well as by the vertical exchange treated in a mean field approximation.
Keywords :
GaAs , Lateral superlattices , Vicinal surfaces , Segregation , Step interaction
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
