Rapid thermal annealing characteristics of Be implanted into InSb

Rapid thermal annealing (RTA) characteristics of Be implanted into InSb with an energy of 100 keV and a dose of 5×1014 cm−2 were investigated by SIMS, AES and RBS. Annealing range is 300–500°C for 30–60 s. The results show that after RTA there is no redistribution of Be on the bulk side of the implanted profiles, but the peak concentrations of Be are reduced in different degrees, and out -diffusion of Be occurs at InSb surface. After annealing at 350°C, lattice damage of Be-implanted InSb is essentially removed and no stoichiometry change occurs at the surface layer. When the RTA temperature is higher than 350°C, thermal decomposition of the InSb surface occurs and deficiency of Sb can be observed. The surface in that case consists of In, Sb and their oxides.