Interface reaction of Ti and mullite ceramic substrate

A 200 nm Ti film was deposited on a polished mullite ceramic substrate at 200°C by electron beam evaporation, and then annealed under high vacuum conditions. Secondary ion mass spectrometry (SIMS), Auger electron spectroscopy (AES) and X-ray diffraction (XRD) measurements were employed to probe the solid interface reaction between Ti and mullite from 200–650°C. The results show that the first deposited Ti atoms have formed Ti–O bonds with O on the mullite surface during the deposition, and trace elemental Al and Si atoms have been segregated, but the interfacial region is very narrow. It is broadened a little after the sample is annealed at 450°C for an hour. Interfacial reaction happens violently when the annealing temperature reaches 650°C for an hour, TiO and Ti–Al as well as Ti–Si compounds are formed.