• Title of article

    Morphology of porous silicon layers: image of active sites from reductive deposition of copper onto the surface

  • Author/Authors

    I. Coulthard، نويسنده , , T.K. Sham، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1998
  • Pages
    5
  • From page
    287
  • To page
    291
  • Abstract
    We report a scanning electron microscopy (SEM) investigation of the morphology of porous silicon layers and comparisons between our observations and a recent theory for its formation and morphology. Also examined was the use of porous silicon as a reducing agent in the preparation of Cu dispersed on the surface of the porous silicon. The morphology of the resulting copper deposits on the surface of the porous silicon layers in turn was used to infer the morphology of the hydrogenated, chemically active sites of the porous silicon. Conditions necessary for the reduction to take place, and the effect of the deposition upon the optical luminescence of the porous silicon are noted.
  • Keywords
    Morphology , Porous silicon , Reductive deposition
  • Journal title
    Applied Surface Science
  • Serial Year
    1998
  • Journal title
    Applied Surface Science
  • Record number

    992383