Title of article :
XPS studies of copper deposition from 1,5-cyclooctadiene-copper(I)-hexafluoroacetylacetonate on Si(111)
Author/Authors :
T.Q Cheng، نويسنده , , K Griffiths، نويسنده , , P.R. Norton، نويسنده , , R.J Puddephatt، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
6
From page :
303
To page :
308
Abstract :
The deposition and dissociation of the precursor 1,5-cyclooctadiene-copper(I)-hexafluoroacetylacetonate [(COD)Cu(hfac)] on Si(111)-7×7 was studied by XPS at various temperatures. COD is desorbed by ∼233 K and the decomposition of the hfac ligand occurs by a temperature of 383 K, probably with migration of CFx groups to the Si surface. These further decompose above 383 K and all F signals are lost by 983 K. Only C and O remain detectable on the surface above 983 K, the former probably as carbide.
Keywords :
Chemical vapour deposition , X-ray photoelectron spectroscopy , Silicon , Metallic films , Metal–semiconductor interfaces , Photoelectron emission , copper , Copper organometallic precursor
Journal title :
Applied Surface Science
Serial Year :
1998
Journal title :
Applied Surface Science
Record number :
992385
Link To Document :
بازگشت