• Title of article

    XPS studies of copper deposition from 1,5-cyclooctadiene-copper(I)-hexafluoroacetylacetonate on Si(111)

  • Author/Authors

    T.Q Cheng، نويسنده , , K Griffiths، نويسنده , , P.R. Norton، نويسنده , , R.J Puddephatt، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1998
  • Pages
    6
  • From page
    303
  • To page
    308
  • Abstract
    The deposition and dissociation of the precursor 1,5-cyclooctadiene-copper(I)-hexafluoroacetylacetonate [(COD)Cu(hfac)] on Si(111)-7×7 was studied by XPS at various temperatures. COD is desorbed by ∼233 K and the decomposition of the hfac ligand occurs by a temperature of 383 K, probably with migration of CFx groups to the Si surface. These further decompose above 383 K and all F signals are lost by 983 K. Only C and O remain detectable on the surface above 983 K, the former probably as carbide.
  • Keywords
    Chemical vapour deposition , X-ray photoelectron spectroscopy , Silicon , Metallic films , Metal–semiconductor interfaces , Photoelectron emission , copper , Copper organometallic precursor
  • Journal title
    Applied Surface Science
  • Serial Year
    1998
  • Journal title
    Applied Surface Science
  • Record number

    992385