Magnetotransport, optical, and electronic subband studies of In0.53Ga0.47As/InP one-side modulation-doped single quantum wells

Magnetotransport and optical properties on In0.53Ga0.47As/InP one-side modulation-doped quantum wells grown by metalorganic chemical vapor deposition have been studied. Transmission electron microscopy measurements showed that the In0.53Ga0.47As/InP heterointerfaces had a perfect lattice match. The results of Shubnikov–de Haas measurements and the observation of the quantum Hall effect at 1.5 K demonstrated clearly the existence of a quasi-two-dimensional electron gas in the quantum wells. Temperature-dependent photoluminescence measurements were performed to characterize the interband transitions and the Fermi-edge singularity in the In0.53Ga0.47As quantum well. The electronic subband energy levels and the wavefunctions in the quantum wells were calculated by a self-consistent method which took into account the exchange-correlation effects, as well as the nonparabolicity effects.