Title of article
CeO2 thin films on Si(100) obtained by pulsed laser deposition
Author/Authors
L Cossaruttoa، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
4
From page
352
To page
355
Abstract
Thin films of CeO2 have been deposited on single crystal silicon (100) samples at room temperature by using pulsed laser deposition (PLD). The study of ion–molecule reactions occurring in the microplasma (by laser microprobe coupled with mass spectrometry (LMMS)) allows the understanding of the oxygen deficiency observed in films by X-ray photoelectron spectroscopy (XPS).
Keywords
Pulsed laser deposition , Si(100) , CeO2 thin films
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992393
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