Abstract :
In this study, we present a self-consistent model for picosecond laser induced electron emission from silicon. Surface
electron emission due to a pulsed laser excitation originates from thermionic and photoelectric effects, both of which depend
on the surface electron temperature and incident laser pulse intensity. By numerically solving a set of coupled transport
equations, time dependent surface electron temperature as well as lattice temperature was determined. The electron emission
rates and electron yields due to photoelectric and thermionic effects have been studied for varying pulse width and pulse
intensity. For picosecond pulses at 1064 nm, the dominant emission mechanism was found to be photoelectric emission for
pulse fluences below the melting threshold. In addition, a comparison between electron emission due to the picosecond
infrared pulse and a picosecond 532 nm pulse was also presented. q1998 Elsevier Science B.V.
