Title of article
Pulsed-laser deposition of Si nanoclusters
Author/Authors
S. Vijayalakshmi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
5
From page
378
To page
382
Abstract
Growth properties of thin films of Si nanoclusters that were deposited on Si wafers by use of pulsed-laser ablation are
discussed. The films were characterized by Atomic Force Microscopy AFM.and X-ray Diffraction XRD.and FTIR
spectroscopy. Large nonlinear optical absorption was measured using a Free-Electron Laser at wavelengths near the infrared
absorption band centered at 9.8 mm. q1998 Elsevier Science B.V.
Keywords
Pulsed-Laser Deposition , Si nanoclusters , Nonlinear optical properties
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992452
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