Pulsed-laser deposition of Si nanoclusters

Growth properties of thin films of Si nanoclusters that were deposited on Si wafers by use of pulsed-laser ablation are discussed. The films were characterized by Atomic Force Microscopy AFM.and X-ray Diffraction XRD.and FTIR spectroscopy. Large nonlinear optical absorption was measured using a Free-Electron Laser at wavelengths near the infrared absorption band centered at 9.8 mm. q1998 Elsevier Science B.V.