Growth of perovskite manganite oxide thin films by PLD

A series of high quality La–Ca–Mn–O, La–Nd–Sr–Mn–O and La–Sr–Mn–Fe–O films have been grown on Si 100. substrates. Their electrical and magnetic properties are strongly dependent on the preparation conditions. Large GMR values, of 70% Drrro.at 300 K under a magnetic field of 4.7 T have been achieved in La0.60Sr0.40Mn0.90Fe0.10O3. The effect of trivalent ions and B-site Fe. doping on the magnetoresistive properties of these perovskite manganese oxides is also investigated. The maximum resistivity temperature increases with La doping in the La0.6yxNdxSr0.40MnO3 system and decreases with Fe doping in La0.60Sr0.40Mn1yxFexO3 films. Our results suggest that lattice distortion associated with the changes in the Mn–Mn electronic hopping parameter as well as Jahn–Teller distortion can explain the observed results. q1998 Elsevier Science B.V.