Author/Authors :
Y.R. Ryu )، نويسنده , , S. Zhu، نويسنده , , S.W. Han، نويسنده , , H.W. White، نويسنده , , P.F. Miceli، نويسنده , , H.R. Chandrasekhar، نويسنده ,
Abstract :
ZnSe and ZnO films have been deposited on 001.GaAs substrates under different pressures by pulsed-laser deposition
PLD.with a 193 nm laser beam. The ambient pressures were changed from 8=10y6 to 5=10y2 Torr with high-purity
argon gas for ZnSe and oxygen gas for ZnO. X-ray diffraction XRD.measurement was performed on these samples. The
FWHM’s of X-ray theta-rocking curves for the 004. peaks of ZnSe films were less than 0.58. X-ray data show that
high-quality ZnO films can be also synthesized by PLD. q1998 Elsevier Science B.V.
