Title of article
ZnSe and ZnO film growth by pulsed-laser deposition
Author/Authors
Y.R. Ryu )، نويسنده , , S. Zhu، نويسنده , , S.W. Han، نويسنده , , H.W. White، نويسنده , , P.F. Miceli، نويسنده , , H.R. Chandrasekhar، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
4
From page
496
To page
499
Abstract
ZnSe and ZnO films have been deposited on 001.GaAs substrates under different pressures by pulsed-laser deposition
PLD.with a 193 nm laser beam. The ambient pressures were changed from 8=10y6 to 5=10y2 Torr with high-purity
argon gas for ZnSe and oxygen gas for ZnO. X-ray diffraction XRD.measurement was performed on these samples. The
FWHM’s of X-ray theta-rocking curves for the 004. peaks of ZnSe films were less than 0.58. X-ray data show that
high-quality ZnO films can be also synthesized by PLD. q1998 Elsevier Science B.V.
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992473
Link To Document