Title of article :
Preparation of amorphous organic semiconductor thin films with polyperinaphthalene structure on temperature-controlled substrates by excimer laser ablation of 3,4,9,10-perylenetetracarboxylic dianhydride
Author/Authors :
Satoru Nishio، نويسنده , , Ryoko Mase، نويسنده , , Tetsuya Oba، نويسنده , , Akiyoshi Matsuzaki، نويسنده , , Hiroyasu Sato، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
6
From page :
589
To page :
594
Abstract :
Amorphous semiconducting organic thin films are prepared on temperature-controlled substrates by excimer laser ablation ELA.of 3,4,9,10-perylenetetracarboxylic dianhydride PTCDA.with 308 nm XeCl.beams. Drastic increase in electric conductivity and decrease in the FT-IR peak intensities related to the side groups of PTCDA monomers are observed for films prepared on substrates above 2008C. Electric conductivity of a film prepared on a substrate at 3008C comes up to 10y1 S cmy1. Raman spectroscopic measurement reveals that this film partially contains polyperinaphthalene PPN. structure. Structural change by increasing substrate temperature and film formation process are discussed. q1998 Elsevier Science B.V.
Keywords :
ablation , excimer laser , 3 , 4 , 9 , 10-Perylenetetracarboxylic dianhydride , Polyperinaphthalene , Amorphous organic semiconductor , thin films
Journal title :
Applied Surface Science
Serial Year :
1998
Journal title :
Applied Surface Science
Record number :
992491
Link To Document :
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