Title of article
Competition between terrace and step nucleation: epitaxy of CaF2 on vicinal Si 111/studied by atomic force microscopy
Author/Authors
Joachim Wollschl¨ager )، نويسنده , , Holger Pietsch، نويسنده , , Andreas Klust، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
7
From page
29
To page
35
Abstract
The morphology of CaF2 adlayers deposited on vicinal Si 111.substrates has been studied by atomic force microscopy
AFM.for low and high deposition temperatures. In the low temperature regime the adlayer grows in the layer-by-layer
growth mode preserving the vicinal step structure of the substrate. The diffusion energy of 1.5 eV for CaF2 molecules on
CaF2 terraces is obtained from the transition from terrace to step nucleation. In the high temperature regime the adlayer
morphology is very inhomogeneous since the adlayer grows in the Stranski–Krastanov growth mode. Here the CaF2
growing on a closed CaF interface layer does not cover all terraces. This morphology is attributed to the heterogeneous
nucleation of islands at steps and to the formation of additional triangular protrusions. q1998 Elsevier Science B.V. All
rights reserved.
Keywords
Atomic force microscopy AFM. , Nucleation , Molecular beam epitaxy , Insulation film , epitaxy , Surface diffusion , Surface morphology , GROWTH , CaF2 , Si 111. , Vicinal single crystal surfaces , Insulator–semiconductor thin film structure
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992573
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