• Title of article

    Competition between terrace and step nucleation: epitaxy of CaF2 on vicinal Si 111/studied by atomic force microscopy

  • Author/Authors

    Joachim Wollschl¨ager )، نويسنده , , Holger Pietsch، نويسنده , , Andreas Klust، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1998
  • Pages
    7
  • From page
    29
  • To page
    35
  • Abstract
    The morphology of CaF2 adlayers deposited on vicinal Si 111.substrates has been studied by atomic force microscopy AFM.for low and high deposition temperatures. In the low temperature regime the adlayer grows in the layer-by-layer growth mode preserving the vicinal step structure of the substrate. The diffusion energy of 1.5 eV for CaF2 molecules on CaF2 terraces is obtained from the transition from terrace to step nucleation. In the high temperature regime the adlayer morphology is very inhomogeneous since the adlayer grows in the Stranski–Krastanov growth mode. Here the CaF2 growing on a closed CaF interface layer does not cover all terraces. This morphology is attributed to the heterogeneous nucleation of islands at steps and to the formation of additional triangular protrusions. q1998 Elsevier Science B.V. All rights reserved.
  • Keywords
    Atomic force microscopy AFM. , Nucleation , Molecular beam epitaxy , Insulation film , epitaxy , Surface diffusion , Surface morphology , GROWTH , CaF2 , Si 111. , Vicinal single crystal surfaces , Insulator–semiconductor thin film structure
  • Journal title
    Applied Surface Science
  • Serial Year
    1998
  • Journal title
    Applied Surface Science
  • Record number

    992573