Title of article
New structural model for the Si(111)4×1–In reconstruction
Author/Authors
A.A. Saranin، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
5
From page
96
To page
100
Abstract
A new π-bonded-chain-stacking-fault (π-SF) model is proposed for the Si(111)4×1–In surface structure. The model incorporates 4×1 Si(111) substrate reconstruction consisting of the sixfold Si rings in the faulted–unfaulted sequence connected through fivefold and sevenfold Si rings. Indium atoms (0.75 monolayer) reside above sixfold and fivefold Si rings, while sevenfold Si rings form π-bonded chains between In ridges.
Keywords
Atom-solid interactions , Silicon , Indium , Surface structure , morphology , Roughness , and topography , Auger electron spectroscopy (AES) , Low energy electron diffraction (LEED) , Scanning tunnelling microscopy (STM)
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992584
Link To Document