The role of (4×3) surface reconstruction induced by In adsorption for the heteroepitaxial growth of InSb on Si(001)-2×1 surface

The structure of the In-terminated Si(001) surface has been observed by reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM) and atomic force microscopy (AFM). The surface reconstruction induced by In of about 1 ML deposited on Si(001)-2×1 surface at about 490°C shows clearly a (4×3) double domain structure. In and Sb are co-deposited subsequently on the (4×3) surface as a function of growth temperature of 230–380°C. Surface structure, morphology and crystal quality of the grown InSb films with about 9000 Å are characterized by RHEED, scanning electron microscopy (SEM) and X-ray diffraction (XRD). For the deposition on the Si(001)–In(4×3) surface at a constant temperature between 230°C and 280°C, InSb(022) face grows parallel to the Si(001). For the deposition at higher temperatures, the grown films are poly-crystalline. However, for the growth with a gradual increase in temperature from 280 to 380°C, InSb(004) peak is observed in XRD pattern, suggesting the growth of InSb films heteroepitaxially oriented to Si(001) surface. In contrast with the growth on In(4×3) surface, the direct growth on Si(001) surface without In(4×3) at 280°C results in the growth of poly-crystalline InSb.