Nitridation of Si 100/surface with NH3

The nitridation of a Si 100.surface with a NH3 beam at temperatures between 600 and 9008C was studied using X-ray photoelectron spectroscopy XPS.and scanning electron microscopy SEM.. Thicker film was formed at higher temperature. The composition ratio of the film was almost constant during the film growth at all temperature. Island growth of silicon nitride was observed at 9008C using SEM. The N1s XPS spectrum of the Si surface nitrided was deconvoluted into two Gaussian components. q1998 Elsevier Science B.V. All rights reserved