Title of article
Nitridation of Si 100/surface with NH3
Author/Authors
S. Ishidzuka، نويسنده , , Y. Igari، نويسنده , , T. Takaoka، نويسنده , , I. Kusunoki، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
5
From page
107
To page
111
Abstract
The nitridation of a Si 100.surface with a NH3 beam at temperatures between 600 and 9008C was studied using X-ray
photoelectron spectroscopy XPS.and scanning electron microscopy SEM.. Thicker film was formed at higher temperature.
The composition ratio of the film was almost constant during the film growth at all temperature. Island growth of silicon
nitride was observed at 9008C using SEM. The N1s XPS spectrum of the Si surface nitrided was deconvoluted into two
Gaussian components. q1998 Elsevier Science B.V. All rights reserved
Keywords
Silicon Nitride M1b78. , Ammonia M1c12. , Scanning electronmicroscopy S2ej12. , X-ray photoelectron spectroscopy S2pe12. , Silicon M1a90.
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992586
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