Electronic characterization of SirSiO structure using 2 photo-CVD SiO thin film on atomically flat Si substrate

Micro-morphology of Si surface treated by chemical solution has been observed by atomic force microscope, and its relationship with electronic property of SiO2rSi structure has been investigated. Well-ordered atomic steps and flat terraces were observed on some Si surfaces. SiO2 film has been prepared on the substrates at low temperatures of 3008C by photo-induced chemical vapor deposition photo-CVD.method. Interface state densities of the SiO2rSi structures become less on the atomically flat Si than those on rough Si. In addition, breakdown voltage of the SiO2 films were measured to clarify the relation of the insulation property with roughness. A and B modes of the breakdown have been observed in as-deposited sample, but is independent on surface roughness. These failures can be reduced by O2 annealing. q1998 Elsevier Science B.V. All rights reserved.