• Title of article

    Hydrogen molecule trapped in silicon crystal

  • Author/Authors

    K.G. Nakamura *، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1998
  • Pages
    5
  • From page
    243
  • To page
    247
  • Abstract
    Hydrogen molecule has been observed in the hydrogen-atom-treated silicon crystal using Raman spectroscopy. Trapping site and the vibrational frequency of H2 in the silicon crystal have been studied with theoretical calculations. The ab initio molecular orbital theory and the density-functional-theory calculations have been performed with a Si10H16 cluster model. The calculations show that the trapping site of H2 in the silicon crystal is the tetrahedral interstitial site and the calculated vibrational frequency agrees reasonably with the experiment. q1998 Elsevier Science B.V. All rights reserved
  • Keywords
    Hydrogen , room temperature , Raman spectroscopy
  • Journal title
    Applied Surface Science
  • Serial Year
    1998
  • Journal title
    Applied Surface Science
  • Record number

    992608