Title of article :
Formation of an ordered surface compound consisting of Ag, Si, and H on Si 001/
Author/Authors :
A. Nagashima )، نويسنده , , T. Kimura، نويسنده , , J. Yoshino، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
6
From page :
248
To page :
253
Abstract :
With scanning tunneling microscopy and low energy electron diffraction, we have studied formation of a surface compound with Ag, Si and H on Si 001.. In contrast to the case of Si 111.– ʹ3 =ʹ3.Ag, on which adsorption of H atoms brings no homogeneous phases, moderate H adsorption on Si 001.– 2=3.Ag produces a uniform compound phase with a 2=2 structure that lacks mirror symmetry in thew110xdirection. Further H adsorption causes agglomeration of surface atoms while the flat area of the surface becomes dominated by another asymmetric 2=2 structure. q1998 Elsevier Science B.V. All rights reserved.
Keywords :
Si 001.– 2=3.Ag , H adsorption , Surface compound , low energy electron diffraction , Scanning tunneling microscopy
Journal title :
Applied Surface Science
Serial Year :
1998
Journal title :
Applied Surface Science
Record number :
992609
Link To Document :
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