• Title of article

    Formation of an ordered surface compound consisting of Ag, Si, and H on Si 001/

  • Author/Authors

    A. Nagashima )، نويسنده , , T. Kimura، نويسنده , , J. Yoshino، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1998
  • Pages
    6
  • From page
    248
  • To page
    253
  • Abstract
    With scanning tunneling microscopy and low energy electron diffraction, we have studied formation of a surface compound with Ag, Si and H on Si 001.. In contrast to the case of Si 111.– ʹ3 =ʹ3.Ag, on which adsorption of H atoms brings no homogeneous phases, moderate H adsorption on Si 001.– 2=3.Ag produces a uniform compound phase with a 2=2 structure that lacks mirror symmetry in thew110xdirection. Further H adsorption causes agglomeration of surface atoms while the flat area of the surface becomes dominated by another asymmetric 2=2 structure. q1998 Elsevier Science B.V. All rights reserved.
  • Keywords
    Si 001.– 2=3.Ag , H adsorption , Surface compound , low energy electron diffraction , Scanning tunneling microscopy
  • Journal title
    Applied Surface Science
  • Serial Year
    1998
  • Journal title
    Applied Surface Science
  • Record number

    992609