Title of article :
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Author/Authors :
Satoshi Sugahara، نويسنده , , Kimihiko Hosaka، نويسنده , , Masakiyo Matsumura، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
7
From page :
327
To page :
333
Abstract :
Reaction process has been studied for an atomic hydrogen-induced abstraction of methyl groups on the Ge surface. The reaction rate estimated from experiments had a very large activation energy and depended on a surface coverage of methyl groups; they are not expected for a ‘pure’ Eley–Rideal mechanism. The process can be explained by the ‘modified’ Eley–Rideal mechanism or the ‘precursor’ mechanism based on two-dimensionally bound hydrogen atoms on the surface. q1998 Elsevier Science B.V. All rights reserved
Keywords :
methyl group , Abstraction reaction , Atomic layer epitaxy , Ge , Atomic hydrogen , Dimethylgermane
Journal title :
Applied Surface Science
Serial Year :
1998
Journal title :
Applied Surface Science
Record number :
992623
Link To Document :
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